Dispersive readout of valley splittings in cavity-coupled silicon quantum dots

Guido Burkard, J. R. Petta

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

The band structure of bulk silicon has a sixfold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still under intense investigation. Using cavity input-output theory, we propose a method for accurately determining the valley splitting in Si/SiGe double quantum dots embedded in a superconducting microwave resonator. We show that low lying valley states in the double quantum dot energy level spectrum lead to readily observable features in the cavity transmission. These features generate a "fingerprint" of the microscopic energy level structure of a semiconductor double quantum dot, providing useful information on valley splittings and intervalley coupling rates.

Original languageEnglish (US)
Article number195305
JournalPhysical Review B
Volume94
Issue number19
DOIs
StatePublished - Jan 1 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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