Disorder effects on ferromagnetism in diluted, magnetic semiconductors

M. P. Kennett, M. Berciu, R. N. Bhatt

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We discuss a model for diluted magnetic semiconductors (DMS) appropriate for low charge carrier density and local moment concentrations in III-V DMS such as Ga1-xMnxAs. In our model, carriers arise from the Mn impurity band and are exchange-coupled to the magnetic ions. We have studied this model using mean-field and Monte Carlo techniques. We find that disorder in the Mn ion locations can lead to spatially inhomogeneous local magnetizations below the Curie temperature that are strongly correlated with the local carrier charge density. This motivates a phenomenological two component model that provides an adequate description of thermodynamic properties.

Original languageEnglish (US)
Pages (from-to)1993-1994
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberIII
DOIs
StatePublished - May 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Keywords

  • DMS
  • Disorder
  • Ferromagnetism
  • Spintronics

Fingerprint

Dive into the research topics of 'Disorder effects on ferromagnetism in diluted, magnetic semiconductors'. Together they form a unique fingerprint.

Cite this