Disorder effects on ferromagnetism in diluted, magnetic semiconductors

M. P. Kennett; M. Berciu; R. N. Bhatt

doi:10.1016/j.jmmm.2003.12.788

Disorder effects on ferromagnetism in diluted, magnetic semiconductors

M. P. Kennett, M. Berciu, R. N. Bhatt

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2 Scopus citations

Abstract

We discuss a model for diluted magnetic semiconductors (DMS) appropriate for low charge carrier density and local moment concentrations in III-V DMS such as Ga_1-xMn_xAs. In our model, carriers arise from the Mn impurity band and are exchange-coupled to the magnetic ions. We have studied this model using mean-field and Monte Carlo techniques. We find that disorder in the Mn ion locations can lead to spatially inhomogeneous local magnetizations below the Curie temperature that are strongly correlated with the local carrier charge density. This motivates a phenomenological two component model that provides an adequate description of thermodynamic properties.

Original language	English (US)
Pages (from-to)	1993-1994
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	III
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.788
State	Published - May 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Keywords

DMS
Disorder
Ferromagnetism
Spintronics

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10.1016/j.jmmm.2003.12.788

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title = "Disorder effects on ferromagnetism in diluted, magnetic semiconductors",

abstract = "We discuss a model for diluted magnetic semiconductors (DMS) appropriate for low charge carrier density and local moment concentrations in III-V DMS such as Ga1-xMnxAs. In our model, carriers arise from the Mn impurity band and are exchange-coupled to the magnetic ions. We have studied this model using mean-field and Monte Carlo techniques. We find that disorder in the Mn ion locations can lead to spatially inhomogeneous local magnetizations below the Curie temperature that are strongly correlated with the local carrier charge density. This motivates a phenomenological two component model that provides an adequate description of thermodynamic properties.",

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author = "Kennett, {M. P.} and M. Berciu and Bhatt, {R. N.}",

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T1 - Disorder effects on ferromagnetism in diluted, magnetic semiconductors

AU - Kennett, M. P.

AU - Berciu, M.

AU - Bhatt, R. N.

PY - 2004/5

Y1 - 2004/5

N2 - We discuss a model for diluted magnetic semiconductors (DMS) appropriate for low charge carrier density and local moment concentrations in III-V DMS such as Ga1-xMnxAs. In our model, carriers arise from the Mn impurity band and are exchange-coupled to the magnetic ions. We have studied this model using mean-field and Monte Carlo techniques. We find that disorder in the Mn ion locations can lead to spatially inhomogeneous local magnetizations below the Curie temperature that are strongly correlated with the local carrier charge density. This motivates a phenomenological two component model that provides an adequate description of thermodynamic properties.

AB - We discuss a model for diluted magnetic semiconductors (DMS) appropriate for low charge carrier density and local moment concentrations in III-V DMS such as Ga1-xMnxAs. In our model, carriers arise from the Mn impurity band and are exchange-coupled to the magnetic ions. We have studied this model using mean-field and Monte Carlo techniques. We find that disorder in the Mn ion locations can lead to spatially inhomogeneous local magnetizations below the Curie temperature that are strongly correlated with the local carrier charge density. This motivates a phenomenological two component model that provides an adequate description of thermodynamic properties.

KW - DMS

KW - Disorder

KW - Ferromagnetism

KW - Spintronics

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U2 - 10.1016/j.jmmm.2003.12.788

DO - 10.1016/j.jmmm.2003.12.788

M3 - Article

AN - SCOPUS:23144459147

SN - 0304-8853

VL - 272-276

SP - 1993

EP - 1994

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - III

ER -

Disorder effects on ferromagnetism in diluted, magnetic semiconductors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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