Disorder-driven collapse of the mobility gap and transition to an insulator in the fractional quantum Hall effect

D. N. Sheng, Xin Wan, E. H. Rezayi, Kun Yang, Ravindra N. Bhatt, Frederick D. Haldane

Research output: Contribution to journalArticle

49 Scopus citations

Abstract

Quantum Hall state in the presence of random disorder was investigated. Topological invariant Chern number was studied. Results showed that the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse.

Original languageEnglish (US)
Pages (from-to)2568021-2568024
Number of pages4
JournalPhysical review letters
Volume90
Issue number25 I
StatePublished - Jun 27 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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