Disorder-driven collapse of the mobility gap and transition to an insulator in the fractional quantum Hall effect

D. N. Sheng; Xin Wan; E. H. Rezayi; Kun Yang; R. N. Bhatt; F. D.M. Haldane

Disorder-driven collapse of the mobility gap and transition to an insulator in the fractional quantum Hall effect

D. N. Sheng, Xin Wan, E. H. Rezayi, Kun Yang, R. N. Bhatt, F. D.M. Haldane

Research output: Contribution to journal › Article › peer-review

Abstract

Quantum Hall state in the presence of random disorder was investigated. Topological invariant Chern number was studied. Results showed that the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse.

Original language	English (US)
Article number	256802
Pages (from-to)	2568021-2568024
Number of pages	4
Journal	Physical review letters
Volume	90
Issue number	25 I
State	Published - Jun 27 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

@article{6516d3f244dd465b8ded65da491dbb30,

title = "Disorder-driven collapse of the mobility gap and transition to an insulator in the fractional quantum Hall effect",

abstract = "Quantum Hall state in the presence of random disorder was investigated. Topological invariant Chern number was studied. Results showed that the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse.",

author = "Sheng, {D. N.} and Xin Wan and Rezayi, {E. H.} and Kun Yang and Bhatt, {R. N.} and Haldane, {F. D.M.}",

year = "2003",

month = jun,

day = "27",

language = "English (US)",

volume = "90",

pages = "2568021--2568024",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "25 I",

}

TY - JOUR

T1 - Disorder-driven collapse of the mobility gap and transition to an insulator in the fractional quantum Hall effect

AU - Sheng, D. N.

AU - Wan, Xin

AU - Rezayi, E. H.

AU - Yang, Kun

AU - Bhatt, R. N.

AU - Haldane, F. D.M.

PY - 2003/6/27

Y1 - 2003/6/27

N2 - Quantum Hall state in the presence of random disorder was investigated. Topological invariant Chern number was studied. Results showed that the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse.

AB - Quantum Hall state in the presence of random disorder was investigated. Topological invariant Chern number was studied. Results showed that the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse.

UR - http://www.scopus.com/inward/record.url?scp=0041766727&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041766727&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0041766727

SN - 0031-9007

VL - 90

SP - 2568021

EP - 2568024

JO - Physical Review Letters

JF - Physical Review Letters

IS - 25 I

M1 - 256802

ER -

Disorder-driven collapse of the mobility gap and transition to an insulator in the fractional quantum Hall effect

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this