Disorder-Driven Collapse of the Mobility Gap and Transition to an Insulator in the Fractional Quantum Hall Effect

D. N. Sheng, Xin Wan, E. H. Rezayi, Kun Yang, R. N. Bhatt, F. D.M. Haldane

Research output: Contribution to journalArticle

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Abstract

We study the [Formula presented] quantum Hall state in the presence of random disorder. We calculate the topologically invariant Chern number, which is the only quantity known at present to distinguish unambiguously between insulating and current carrying states in an interacting system. The mobility gap can be determined numerically this way and is found to agree with experimental value semiquantitatively. As the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse, leading to an insulating phase.

Original languageEnglish (US)
Pages (from-to)4
Number of pages1
JournalPhysical review letters
Volume90
Issue number25
DOIs
StatePublished - 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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