TY - JOUR
T1 - Disorder and frustration in diluted magnetic semiconductors at low carrier densities
AU - Bhatt, R. N.
AU - Zhou, Chenggang
AU - Kennett, Malcolm
AU - Berciu, Mona
AU - Wan, Xin
PY - 2005/1/3
Y1 - 2005/1/3
N2 - We examine the effects of positional disorder of the magnetic ion in III-V Diluted Magnetic Semiconductors such as (Ga,Mn) As at low carrier densities on the nature of the low-temperature ordered magnetic state, using numerical mean field and Monte Carlo methods. We find that positional disorder leads to a highly inhomogeneous ferromagnetic order in the low carrier density limit, with unusual thermodynamic and magnetic behavior. Spin-orbit coupling presented in the valence band leads to frustration in the hole-doped system, but does not significantly affect the low temperature magnetization.
AB - We examine the effects of positional disorder of the magnetic ion in III-V Diluted Magnetic Semiconductors such as (Ga,Mn) As at low carrier densities on the nature of the low-temperature ordered magnetic state, using numerical mean field and Monte Carlo methods. We find that positional disorder leads to a highly inhomogeneous ferromagnetic order in the low carrier density limit, with unusual thermodynamic and magnetic behavior. Spin-orbit coupling presented in the valence band leads to frustration in the hole-doped system, but does not significantly affect the low temperature magnetization.
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U2 - 10.1142/S0217979205027858
DO - 10.1142/S0217979205027858
M3 - Article
AN - SCOPUS:18444401427
SN - 0217-9792
VL - 19
SP - 5
EP - 7
JO - International Journal of Modern Physics B
JF - International Journal of Modern Physics B
IS - 1-3
ER -