Disorder and frustration in diluted magnetic semiconductors at low carrier densities

Ravindra N. Bhatt, Chenggang Zhou, Malcolm Kennett, Mona Berciu, Xin Wan

Research output: Contribution to journalArticlepeer-review

Abstract

We examine the effects of positional disorder of the magnetic ion in III-V Diluted Magnetic Semiconductors such as (Ga,Mn) As at low carrier densities on the nature of the low-temperature ordered magnetic state, using numerical mean field and Monte Carlo methods. We find that positional disorder leads to a highly inhomogeneous ferromagnetic order in the low carrier density limit, with unusual thermodynamic and magnetic behavior. Spin-orbit coupling presented in the valence band leads to frustration in the hole-doped system, but does not significantly affect the low temperature magnetization.

Original languageEnglish (US)
Pages (from-to)5-7
Number of pages3
JournalInternational Journal of Modern Physics B
Volume19
Issue number1-3
DOIs
StatePublished - Jan 3 2005

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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