Dislocation climb strengthening in systems with immobile obstacles: Three-dimensional level-set simulation study

Zi Chen, Kevin T. Chu, David J. Srolovitz, Jeffrey M. Rickman, Mikko P. Haataja

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

We employ a parallel, three-dimensional level-set code to simulate the dynamics of isolated dislocation lines and loops in an obstacle-rich environment. This system serves as a convenient prototype of those in which extended, one-dimensional objects interact with obstacles and the out-of-plane motion of these objects is key to understanding their pinning-depinning behavior. In contrast to earlier models of dislocation motion, we incorporate long-ranged interactions among dislocation segments and obstacles to study the effect of climb on dislocation dynamics in the presence of misfitting penetrable obstacles/solutes, as embodied in an effective climb mobility. Our main observations are as follows. First, increasing climb mobility leads to more effective pinning by the obstacles, implying increased strengthening. Second, decreasing the range of interactions significantly reduces the effect of climb. The dependence of the critical stress on obstacle concentration and misfit strength is also explored and compared with existing models. In particular, our results are shown to be in reasonable agreement with the Friedel-Suzuki theory. Finally, the limitations inherent in the simplified model employed here, including the neglect of some lattice effects and the use of a coarse-grained climb mobility, are discussed.

Original languageEnglish (US)
Article number054104
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number5
DOIs
StatePublished - Feb 3 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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