Abstract
We have studied the growth of pentacene films (2-8 monolayers) on modified Si-wafer surfaces by means of synchrotron x-ray diffraction. The diffraction data reveal a nonthermal damping of the (coherent) Bragg reflection intensities according to an exponential dependence on the 3/2 power of the momentum transfer. The simultaneous presence of strong diffuse scattering centered around the Bragg positions indicates the presence of local defects. A quantitative analysis of the Bragg and diffuse scattering allows us to identify screw and edge dislocations as the main defects on the molecular scale. We quantify dislocation densities as a function of substrate termination.
Original language | English (US) |
---|---|
Pages (from-to) | 125401-1-125401-7 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 70 |
Issue number | 12 |
DOIs | |
State | Published - Sep 2004 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics