Discovery of narrow-band photoionization resonance transition at 0.65 eV in AlGaAs/GaAs heterostructures

M. Spector; L. N. Pfeiffer; J. C. Licini; K. W. West; G. A. Baraff

doi:10.1103/PhysRevLett.71.903

Discovery of narrow-band photoionization resonance transition at 0.65 eV in AlGaAs/GaAs heterostructures

M. Spector, L. N. Pfeiffer, J. C. Licini, K. W. West, G. A. Baraff

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photpath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.

Original language	English (US)
Pages (from-to)	903-906
Number of pages	4
Journal	Physical review letters
Volume	71
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.71.903
State	Published - 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.71.903

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title = "Discovery of narrow-band photoionization resonance transition at 0.65 eV in AlGaAs/GaAs heterostructures",

abstract = "We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photpath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.",

author = "M. Spector and Pfeiffer, {L. N.} and Licini, {J. C.} and West, {K. W.} and Baraff, {G. A.}",

year = "1993",

doi = "10.1103/PhysRevLett.71.903",

language = "English (US)",

volume = "71",

pages = "903--906",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "6",

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TY - JOUR

T1 - Discovery of narrow-band photoionization resonance transition at 0.65 eV in AlGaAs/GaAs heterostructures

AU - Spector, M.

AU - Pfeiffer, L. N.

AU - Licini, J. C.

AU - West, K. W.

AU - Baraff, G. A.

PY - 1993

Y1 - 1993

N2 - We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photpath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.

AB - We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photpath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.

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U2 - 10.1103/PhysRevLett.71.903

DO - 10.1103/PhysRevLett.71.903

M3 - Article

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SN - 0031-9007

VL - 71

SP - 903

EP - 906

JO - Physical review letters

JF - Physical review letters

IS - 6

ER -

Discovery of narrow-band photoionization resonance transition at 0.65 eV in AlGaAs/GaAs heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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