Direct transition resonance in atomically uniform topological Sb(111) thin films

Guang Bian, Caizhi Xu, Tay Rong Chang, Xiaoxiong Wang, Saavanth Velury, Jie Ren, Hao Zheng, Horng Tay Jeng, T. Miller, M. Zahid Hasan, T. C. Chiang

Research output: Contribution to journalArticle

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Abstract

Atomically uniform Sb(111) films are fabricated by the method of molecular beam epitaxy on an optimized Si(111) surface. Two-dimensional quantum well states and topological surface states in these films are well resolved as measured by angle-resolved photoemission spectroscopy. We observe an evolution of direct transition resonances by varying the excitation photon energy (and thus the perpendicular crystal momentum). The experimental results are reproduced in a comprehensive model calculation taking into account first-principles calculated initial states and time-reversed low-energy-electron-diffraction final states in the photoexcitation process. The resonant behavior illustrates that the topological surface states and the quantum well states are analytically connected in momentum space in all three dimensions.

Original languageEnglish (US)
Article number241401
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number24
DOIs
StatePublished - Dec 2 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Bian, G., Xu, C., Chang, T. R., Wang, X., Velury, S., Ren, J., Zheng, H., Jeng, H. T., Miller, T., Hasan, M. Z., & Chiang, T. C. (2015). Direct transition resonance in atomically uniform topological Sb(111) thin films. Physical Review B - Condensed Matter and Materials Physics, 92(24), [241401]. https://doi.org/10.1103/PhysRevB.92.241401