Direct optical measurement of the valence band offset of p+ Si1-x-yGexCy/p- Si(100) by heterojunction internal photoemission

C. L. Chang, L. P. Rokhinson, James Christopher Sturm

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Abstract

Optical absorption measurements have been performed to study the effect of substitutional carbon on the valence band offset of compressively strained p+ Si1-x-yGexCy/(100) p- Si. The compressively strained p+ Si1-x-yGexCy/(100) p- Si heterojunction internal photoemission structures were grown by rapid thermal chemical vapor deposition with substitutional carbon levels up to 2.5%. Carbon decreased the valence band offset by 26±1meV/% substitutional carbon. Based on previous reports of the effect of carbon on the band gap of Si1-x-yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of compressively strained Si1-x-yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment.

Original languageEnglish (US)
Pages (from-to)3568-3570
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number24
DOIs
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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