Direct measurement of surface complex loading and surface dipole and their effect on simple device behavior

Jing Guo; Norbert Koch; Jeffrey Schwartz; Steven L. Bernasek

doi:10.1021/jp046337v

Direct measurement of surface complex loading and surface dipole and their effect on simple device behavior

Jing Guo, Norbert Koch, Jeffrey Schwartz, Steven L. Bernasek

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Tin complexes of phenoxide ligands having a range of dipole moments were prepared on the surface of indium-tin oxide (ITO). Surface complex loadings and stoichiometries were measured by quartz crystal microgravimetry. Work functions of ITO substrates treated with these various surface complexes were measured using a Kelvin probe. Surface complex dipole moments were then calculated based on measured surface loadings. Changes in the ITO work function effected by surface phenoxide complex introduction correlate with these surface complex dipole moments and with total surface dipole per unit area, and current densities in simple hole-only diode devices also correlate with these total surface dipoles.

Original language	English (US)
Pages (from-to)	3966-3970
Number of pages	5
Journal	Journal of Physical Chemistry B
Volume	109
Issue number	9
DOIs	https://doi.org/10.1021/jp046337v
State	Published - Mar 10 2005

All Science Journal Classification (ASJC) codes

Materials Chemistry
Surfaces, Coatings and Films
Physical and Theoretical Chemistry

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10.1021/jp046337v

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abstract = "Tin complexes of phenoxide ligands having a range of dipole moments were prepared on the surface of indium-tin oxide (ITO). Surface complex loadings and stoichiometries were measured by quartz crystal microgravimetry. Work functions of ITO substrates treated with these various surface complexes were measured using a Kelvin probe. Surface complex dipole moments were then calculated based on measured surface loadings. Changes in the ITO work function effected by surface phenoxide complex introduction correlate with these surface complex dipole moments and with total surface dipole per unit area, and current densities in simple hole-only diode devices also correlate with these total surface dipoles.",

author = "Jing Guo and Norbert Koch and Jeffrey Schwartz and Bernasek, {Steven L.}",

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AU - Guo, Jing

AU - Koch, Norbert

AU - Schwartz, Jeffrey

AU - Bernasek, Steven L.

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Y1 - 2005/3/10

N2 - Tin complexes of phenoxide ligands having a range of dipole moments were prepared on the surface of indium-tin oxide (ITO). Surface complex loadings and stoichiometries were measured by quartz crystal microgravimetry. Work functions of ITO substrates treated with these various surface complexes were measured using a Kelvin probe. Surface complex dipole moments were then calculated based on measured surface loadings. Changes in the ITO work function effected by surface phenoxide complex introduction correlate with these surface complex dipole moments and with total surface dipole per unit area, and current densities in simple hole-only diode devices also correlate with these total surface dipoles.

AB - Tin complexes of phenoxide ligands having a range of dipole moments were prepared on the surface of indium-tin oxide (ITO). Surface complex loadings and stoichiometries were measured by quartz crystal microgravimetry. Work functions of ITO substrates treated with these various surface complexes were measured using a Kelvin probe. Surface complex dipole moments were then calculated based on measured surface loadings. Changes in the ITO work function effected by surface phenoxide complex introduction correlate with these surface complex dipole moments and with total surface dipole per unit area, and current densities in simple hole-only diode devices also correlate with these total surface dipoles.

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Direct measurement of surface complex loading and surface dipole and their effect on simple device behavior

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