Direct mask-free patterning of molecular organic semiconductors using organic vapor jet printing

Max Shtein; Peter Peumans; Jay B. Benziger; Stephen R. Forrest

doi:10.1063/1.1791760

Direct mask-free patterning of molecular organic semiconductors using organic vapor jet printing

Max Shtein, Peter Peumans, Jay B. Benziger, Stephen R. Forrest

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Direct mask-free patterning of molecular organic semiconductors was analyzed using organic vapor jet printing. Organic molecules were sublimated into a hot inert carrier gas and expanded through microscopic nozzles resulting in a highly collimated gas jet. The jet impinging on a cooled substrate, formed a thin film deposit whose lateral extent was controlled by the nozzle diameter, nozzle-to-substrate separation, and the downstream ambient pressure. It was found that due to the sudden change in the flow direction upon exiting the nozzle and the resulting kinetic impact of the jet on the substrate, the local dynamic pressure in the region between the nozzle and the substrate exceeded P _L.

Original language	English (US)
Pages (from-to)	4500-4507
Number of pages	8
Journal	Journal of Applied Physics
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.1791760
State	Published - Oct 15 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1791760

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title = "Direct mask-free patterning of molecular organic semiconductors using organic vapor jet printing",

abstract = "Direct mask-free patterning of molecular organic semiconductors was analyzed using organic vapor jet printing. Organic molecules were sublimated into a hot inert carrier gas and expanded through microscopic nozzles resulting in a highly collimated gas jet. The jet impinging on a cooled substrate, formed a thin film deposit whose lateral extent was controlled by the nozzle diameter, nozzle-to-substrate separation, and the downstream ambient pressure. It was found that due to the sudden change in the flow direction upon exiting the nozzle and the resulting kinetic impact of the jet on the substrate, the local dynamic pressure in the region between the nozzle and the substrate exceeded P L.",

author = "Max Shtein and Peter Peumans and Benziger, {Jay B.} and Forrest, {Stephen R.}",

note = "Funding Information: This work was supported by the Universal Display Corporation and the Air Force Office of Scientific Research. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2004",

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doi = "10.1063/1.1791760",

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AU - Shtein, Max

AU - Peumans, Peter

AU - Benziger, Jay B.

AU - Forrest, Stephen R.

PY - 2004/10/15

Y1 - 2004/10/15

N2 - Direct mask-free patterning of molecular organic semiconductors was analyzed using organic vapor jet printing. Organic molecules were sublimated into a hot inert carrier gas and expanded through microscopic nozzles resulting in a highly collimated gas jet. The jet impinging on a cooled substrate, formed a thin film deposit whose lateral extent was controlled by the nozzle diameter, nozzle-to-substrate separation, and the downstream ambient pressure. It was found that due to the sudden change in the flow direction upon exiting the nozzle and the resulting kinetic impact of the jet on the substrate, the local dynamic pressure in the region between the nozzle and the substrate exceeded P L.

AB - Direct mask-free patterning of molecular organic semiconductors was analyzed using organic vapor jet printing. Organic molecules were sublimated into a hot inert carrier gas and expanded through microscopic nozzles resulting in a highly collimated gas jet. The jet impinging on a cooled substrate, formed a thin film deposit whose lateral extent was controlled by the nozzle diameter, nozzle-to-substrate separation, and the downstream ambient pressure. It was found that due to the sudden change in the flow direction upon exiting the nozzle and the resulting kinetic impact of the jet on the substrate, the local dynamic pressure in the region between the nozzle and the substrate exceeded P L.

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Direct mask-free patterning of molecular organic semiconductors using organic vapor jet printing

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