Direct mask-free patterning of molecular organic semiconductors was analyzed using organic vapor jet printing. Organic molecules were sublimated into a hot inert carrier gas and expanded through microscopic nozzles resulting in a highly collimated gas jet. The jet impinging on a cooled substrate, formed a thin film deposit whose lateral extent was controlled by the nozzle diameter, nozzle-to-substrate separation, and the downstream ambient pressure. It was found that due to the sudden change in the flow direction upon exiting the nozzle and the resulting kinetic impact of the jet on the substrate, the local dynamic pressure in the region between the nozzle and the substrate exceeded P L.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Applied Physics|
|State||Published - Oct 15 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)