Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution

O. Tal, Y. Rosenwaks, Y. Preezant, N. Tessler, C. K. Chan, A. Kahn

Research output: Contribution to journalArticle

140 Scopus citations

Abstract

We investigate the density of states (DOS) for hole transport in undoped and doped amorphous organic films using high lateral resolution Kelvin probe force microscopy. Measurements are done on field effect transistors made of N,NI-diphenyl-N, NI-bis(1-naphthyl)-1,10-biphenylâ€"4,4II- diamine undoped or p doped with tetrafluoro-tetracyanoquinodimethane. We determine the DOS structure of the undoped material, including an anomalous peak related to interfaces between regions of different surface potential, the DOS doping-induced broadening, and doping-induced sharp peaks on the main DOS distribution.

Original languageEnglish (US)
Article number256405
JournalPhysical review letters
Volume95
Issue number25
DOIs
StatePublished - Dec 16 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution'. Together they form a unique fingerprint.

Cite this