Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester blend

Ze Lei Guan, Jong Bok Kim, He Wang, Cherno Jaye, Daniel A. Fischer, Yueh Lin Loo, Antoine Kahn

Research output: Contribution to journalArticle

193 Scopus citations

Abstract

This article focuses on the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester (P3HT:PCBM) blend, widely used in bulk heterojunction (BHJ) solar cells. Given the fact that the surface of the blend film is a nearly pure P3HT wetting layer, we use a lift-off method to access the originally buried surface, which is rich in both P3HT and PCBM and thus representative of the BHJ. The combination of direct and inverse photoemission spectroscopy on this surface leads to a determination of the energy gap between the lowest unoccupied molecular orbital (LUMO) of the acceptor and the highest occupied molecular orbital (HOMO) of the donor. The gap is ∼1.4 eV, which implies a 0.5-0.6 eV interface dipole barrier between the two materials. The energy gap is found to be stable versus in situ annealing up to 100 °C.

Original languageEnglish (US)
Pages (from-to)1779-1785
Number of pages7
JournalOrganic Electronics
Volume11
Issue number11
DOIs
StatePublished - Nov 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Keywords

  • Blend
  • Bulk heterojunction
  • Electronic structure
  • Interface dipole
  • P3HT
  • PCBM

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