Diffusion of free trions in mixed-type GaAs/AlAs quantum wells

Howard W. Yoon; M. D. Sturge; Arza Ron; L. N. Pfeiffer

doi:10.1016/S0022-2313(97)00056-2

Diffusion of free trions in mixed-type GaAs/AlAs quantum wells

Howard W. Yoon
, M. D. Sturge
, Arza Ron
, L. N. Pfeiffer

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We show that an emission line which depends on the simultaneous presence of excitons and < 2 × 10¹⁰ cm^-2 electrons in a 20 nm GaAs quantum well is due to free negatively charged excitons or 'trions'. Using time- and spatially-resolved photoluminescence, we find that trions and excitons are localized at 5 K, and with increasing bath temperature both species become mobile. The diffusivity of trions and excitons increases linearly with bath temperature, and the trion mobility is found to be about one-half the exciton mobility.

Original language	English (US)
Pages (from-to)	302-304
Number of pages	3
Journal	Journal of Luminescence
Volume	72-74
DOIs	https://doi.org/10.1016/S0022-2313(97)00056-2
State	Published - Jun 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Biophysics
Atomic and Molecular Physics, and Optics
General Chemistry
Biochemistry
Condensed Matter Physics

Keywords

Diffusion
Quantum wells
Trions

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10.1016/S0022-2313(97)00056-2

Cite this

@article{e20fa06237314f52914cfa2458743638,

title = "Diffusion of free trions in mixed-type GaAs/AlAs quantum wells",

abstract = "We show that an emission line which depends on the simultaneous presence of excitons and < 2 × 1010 cm-2 electrons in a 20 nm GaAs quantum well is due to free negatively charged excitons or 'trions'. Using time- and spatially-resolved photoluminescence, we find that trions and excitons are localized at 5 K, and with increasing bath temperature both species become mobile. The diffusivity of trions and excitons increases linearly with bath temperature, and the trion mobility is found to be about one-half the exciton mobility.",

keywords = "Diffusion, Quantum wells, Trions",

author = "Yoon, \{Howard W.\} and Sturge, \{M. D.\} and Arza Ron and Pfeiffer, \{L. N.\}",

year = "1997",

month = jun,

doi = "10.1016/S0022-2313(97)00056-2",

language = "English (US)",

volume = "72-74",

pages = "302--304",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Diffusion of free trions in mixed-type GaAs/AlAs quantum wells

AU - Yoon, Howard W.

AU - Sturge, M. D.

AU - Ron, Arza

AU - Pfeiffer, L. N.

PY - 1997/6

Y1 - 1997/6

N2 - We show that an emission line which depends on the simultaneous presence of excitons and < 2 × 1010 cm-2 electrons in a 20 nm GaAs quantum well is due to free negatively charged excitons or 'trions'. Using time- and spatially-resolved photoluminescence, we find that trions and excitons are localized at 5 K, and with increasing bath temperature both species become mobile. The diffusivity of trions and excitons increases linearly with bath temperature, and the trion mobility is found to be about one-half the exciton mobility.

AB - We show that an emission line which depends on the simultaneous presence of excitons and < 2 × 1010 cm-2 electrons in a 20 nm GaAs quantum well is due to free negatively charged excitons or 'trions'. Using time- and spatially-resolved photoluminescence, we find that trions and excitons are localized at 5 K, and with increasing bath temperature both species become mobile. The diffusivity of trions and excitons increases linearly with bath temperature, and the trion mobility is found to be about one-half the exciton mobility.

KW - Diffusion

KW - Quantum wells

KW - Trions

UR - https://www.scopus.com/pages/publications/0031168413

UR - https://www.scopus.com/pages/publications/0031168413#tab=citedBy

U2 - 10.1016/S0022-2313(97)00056-2

DO - 10.1016/S0022-2313(97)00056-2

M3 - Article

AN - SCOPUS:0031168413

SN - 0022-2313

VL - 72-74

SP - 302

EP - 304

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Diffusion of free trions in mixed-type GaAs/AlAs quantum wells

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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