Diffusion enhanced carbon loss from SiGeC layers due to oxidation

M. S. Carroll; J. C. Sturm; E. Napolitani; D. De Salvador; M. Berti; J. Stangl; G. Bauer; D. J. Tweet

doi:10.1103/PhysRevB.64.073308

Diffusion enhanced carbon loss from SiGeC layers due to oxidation

M. S. Carroll, J. C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, D. J. Tweet

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12 Scopus citations

Abstract

The effect of annealing 25-nm-thick pseudomorphic Si_0.7865Ge_0.21C_0.0035 layers on silicon substrates in nitrogen or oxygen at 850°C was examined for different silicon cap thicknesses and annealing times by x-ray diffraction and secondary-ion mass spectrometry. Carbon is found to diffuse rapidly out of the SiGeC layer and even out of the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases, implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

Original language	English (US)
Article number	073308
Pages (from-to)	733081-733084
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.64.073308
State	Published - Aug 15 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Diffusion enhanced carbon loss from SiGeC layers due to oxidation",

abstract = "The effect of annealing 25-nm-thick pseudomorphic Si0.7865Ge0.21C0.0035 layers on silicon substrates in nitrogen or oxygen at 850°C was examined for different silicon cap thicknesses and annealing times by x-ray diffraction and secondary-ion mass spectrometry. Carbon is found to diffuse rapidly out of the SiGeC layer and even out of the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases, implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.",

author = "Carroll, {M. S.} and Sturm, {J. C.} and E. Napolitani and {De Salvador}, D. and M. Berti and J. Stangl and G. Bauer and Tweet, {D. J.}",

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T1 - Diffusion enhanced carbon loss from SiGeC layers due to oxidation

AU - Carroll, M. S.

AU - Sturm, J. C.

AU - Napolitani, E.

AU - De Salvador, D.

AU - Berti, M.

AU - Stangl, J.

AU - Bauer, G.

AU - Tweet, D. J.

PY - 2001/8/15

Y1 - 2001/8/15

N2 - The effect of annealing 25-nm-thick pseudomorphic Si0.7865Ge0.21C0.0035 layers on silicon substrates in nitrogen or oxygen at 850°C was examined for different silicon cap thicknesses and annealing times by x-ray diffraction and secondary-ion mass spectrometry. Carbon is found to diffuse rapidly out of the SiGeC layer and even out of the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases, implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

AB - The effect of annealing 25-nm-thick pseudomorphic Si0.7865Ge0.21C0.0035 layers on silicon substrates in nitrogen or oxygen at 850°C was examined for different silicon cap thicknesses and annealing times by x-ray diffraction and secondary-ion mass spectrometry. Carbon is found to diffuse rapidly out of the SiGeC layer and even out of the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases, implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

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Diffusion enhanced carbon loss from SiGeC layers due to oxidation

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