Dielectric properties of Ta2O5-SiO2 polycrystalline ceramics

R. J. Cava; J. J. Krajewski; W. F. Peck; G. L. Roberts

doi:10.1063/1.363068

Dielectric properties of Ta₂O₅-SiO₂ polycrystalline ceramics

R. J. Cava, J. J. Krajewski, W. F. Peck, G. L. Roberts

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Abstract

The dielectric properties of (Ta₂O₅)_1-x(SiO₂)_x polycrystalline ceramics for 0.0≤x≤0.20 are reported. Measurements were made at 1 MHz and temperature between -40 and +100 °C. The dielectric properties are not very sensitive to SiO₂ content. A moderate enhancement of the dielectric constant is found, from -30 for pure Ta₂O₅ to ∼45 at x≃0.10. The temperature coefficient of dielectric constant in the vicinity of room temperature decreases from ∼200 ppm/°C for Ta₂O₅ to ∼75 ppm/°C for x=0.14.

Original language	English (US)
Pages (from-to)	2346-2348
Number of pages	3
Journal	Journal of Applied Physics
Volume	80
Issue number	4
DOIs	https://doi.org/10.1063/1.363068
State	Published - Aug 15 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.363068

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title = "Dielectric properties of Ta2O5-SiO2 polycrystalline ceramics",

abstract = "The dielectric properties of (Ta2O5)1-x(SiO2)x polycrystalline ceramics for 0.0≤x≤0.20 are reported. Measurements were made at 1 MHz and temperature between -40 and +100 °C. The dielectric properties are not very sensitive to SiO2 content. A moderate enhancement of the dielectric constant is found, from -30 for pure Ta2O5 to ∼45 at x≃0.10. The temperature coefficient of dielectric constant in the vicinity of room temperature decreases from ∼200 ppm/°C for Ta2O5 to ∼75 ppm/°C for x=0.14.",

author = "Cava, {R. J.} and Krajewski, {J. J.} and Peck, {W. F.} and Roberts, {G. L.}",

year = "1996",

month = aug,

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doi = "10.1063/1.363068",

language = "English (US)",

volume = "80",

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journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Dielectric properties of Ta2O5-SiO2 polycrystalline ceramics

AU - Cava, R. J.

AU - Krajewski, J. J.

AU - Peck, W. F.

AU - Roberts, G. L.

PY - 1996/8/15

Y1 - 1996/8/15

N2 - The dielectric properties of (Ta2O5)1-x(SiO2)x polycrystalline ceramics for 0.0≤x≤0.20 are reported. Measurements were made at 1 MHz and temperature between -40 and +100 °C. The dielectric properties are not very sensitive to SiO2 content. A moderate enhancement of the dielectric constant is found, from -30 for pure Ta2O5 to ∼45 at x≃0.10. The temperature coefficient of dielectric constant in the vicinity of room temperature decreases from ∼200 ppm/°C for Ta2O5 to ∼75 ppm/°C for x=0.14.

AB - The dielectric properties of (Ta2O5)1-x(SiO2)x polycrystalline ceramics for 0.0≤x≤0.20 are reported. Measurements were made at 1 MHz and temperature between -40 and +100 °C. The dielectric properties are not very sensitive to SiO2 content. A moderate enhancement of the dielectric constant is found, from -30 for pure Ta2O5 to ∼45 at x≃0.10. The temperature coefficient of dielectric constant in the vicinity of room temperature decreases from ∼200 ppm/°C for Ta2O5 to ∼75 ppm/°C for x=0.14.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Dielectric properties of Ta₂O₅-SiO₂ polycrystalline ceramics

Abstract

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