Dielectric properties of Ta2O5-SiO2 polycrystalline ceramics

R. J. Cava, J. J. Krajewski, W. F. Peck, G. L. Roberts

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The dielectric properties of (Ta2O5)1-x(SiO2)x polycrystalline ceramics for 0.0≤x≤0.20 are reported. Measurements were made at 1 MHz and temperature between -40 and +100 °C. The dielectric properties are not very sensitive to SiO2 content. A moderate enhancement of the dielectric constant is found, from -30 for pure Ta2O5 to ∼45 at x≃0.10. The temperature coefficient of dielectric constant in the vicinity of room temperature decreases from ∼200 ppm/°C for Ta2O5 to ∼75 ppm/°C for x=0.14.

Original languageEnglish (US)
Pages (from-to)2346-2348
Number of pages3
JournalJournal of Applied Physics
Volume80
Issue number4
DOIs
StatePublished - Aug 15 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Dielectric properties of Ta<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub> polycrystalline ceramics'. Together they form a unique fingerprint.

Cite this