The dielectric properties of (Ta2O5)1-x(SiO2)x polycrystalline ceramics for 0.0≤x≤0.20 are reported. Measurements were made at 1 MHz and temperature between -40 and +100 °C. The dielectric properties are not very sensitive to SiO2 content. A moderate enhancement of the dielectric constant is found, from -30 for pure Ta2O5 to ∼45 at x≃0.10. The temperature coefficient of dielectric constant in the vicinity of room temperature decreases from ∼200 ppm/°C for Ta2O5 to ∼75 ppm/°C for x=0.14.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Applied Physics|
|State||Published - Aug 15 1996|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)