Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3

Y. S. Hor; P. Roushan; H. Beidenkopf; J. Seo; D. Qu; J. G. Checkelsky; L. A. Wray; D. Hsieh; Y. Xia; S. Y. Xu; D. Qian; M. Z. Hasan; N. P. Ong; A. Yazdani; R. J. Cava

doi:10.1103/PhysRevB.81.195203

Development of ferromagnetism in the doped topological insulator Bi _2-x Mn_xTe₃

Y. S. Hor, P. Roushan, H. Beidenkopf, J. Seo, D. Qu, J. G. Checkelsky, L. A. Wray, D. Hsieh, Y. Xia, S. Y. Xu, D. Qian, M. Z. Hasan, N. P. Ong, A. Yazdani, R. J. Cava

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Abstract

The development of ferromagnetism in Mn-doped Bi₂Te₃ is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi _2-xMn_xTe₃, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi _1.96 Mn_0.04 Te₃ and Bi_1.91 Mn _0.09 Te₃, a second-order ferromagnetic transition is observed, with T_C ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi₂ Te₃ basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi₂Te₃ crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi_2-x Mn_xTe₃ and that the dispersion relations of the surface states are changed in a subtle fashion.

Original language	English (US)
Article number	195203
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	81
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.81.195203
State	Published - May 6 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Hor, Y. S., Roushan, P., Beidenkopf, H., Seo, J., Qu, D., Checkelsky, J. G., Wray, L. A., Hsieh, D., Xia, Y., Xu, S. Y., Qian, D., Hasan, M. Z., Ong, N. P., Yazdani, A., & Cava, R. J. (2010). Development of ferromagnetism in the doped topological insulator Bi _2-x Mn_xTe₃. Physical Review B - Condensed Matter and Materials Physics, 81(19), Article 195203. https://doi.org/10.1103/PhysRevB.81.195203

@article{e4bfc271c66a48fabd7648f2366d2c8f,

title = "Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3",

abstract = "The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi 2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi 1.96 Mn0.04 Te3 and Bi1.91 Mn 0.09 Te3, a second-order ferromagnetic transition is observed, with TC ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2 Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi2-x MnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.",

author = "Hor, {Y. S.} and P. Roushan and H. Beidenkopf and J. Seo and D. Qu and Checkelsky, {J. G.} and Wray, {L. A.} and D. Hsieh and Y. Xia and Xu, {S. Y.} and D. Qian and Hasan, {M. Z.} and Ong, {N. P.} and A. Yazdani and Cava, {R. J.}",

year = "2010",

month = may,

day = "6",

doi = "10.1103/PhysRevB.81.195203",

language = "English (US)",

volume = "81",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "19",

}

TY - JOUR

T1 - Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3

AU - Hor, Y. S.

AU - Roushan, P.

AU - Beidenkopf, H.

AU - Seo, J.

AU - Qu, D.

AU - Checkelsky, J. G.

AU - Wray, L. A.

AU - Hsieh, D.

AU - Xia, Y.

AU - Xu, S. Y.

AU - Qian, D.

AU - Hasan, M. Z.

AU - Ong, N. P.

AU - Yazdani, A.

AU - Cava, R. J.

PY - 2010/5/6

Y1 - 2010/5/6

N2 - The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi 2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi 1.96 Mn0.04 Te3 and Bi1.91 Mn 0.09 Te3, a second-order ferromagnetic transition is observed, with TC ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2 Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi2-x MnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.

AB - The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi 2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi 1.96 Mn0.04 Te3 and Bi1.91 Mn 0.09 Te3, a second-order ferromagnetic transition is observed, with TC ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2 Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi2-x MnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.

UR - http://www.scopus.com/inward/record.url?scp=77955643462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955643462&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.81.195203

DO - 10.1103/PhysRevB.81.195203

M3 - Article

AN - SCOPUS:77955643462

SN - 1098-0121

VL - 81

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

M1 - 195203

ER -

Development of ferromagnetism in the doped topological insulator Bi _2-x Mn_xTe₃

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