Development of a silicon-diamond interface on (111) diamond

A. K. Schenk; M. J. Sear; N. Dontschuk; A. Tsai; K. J. Rietwyk; A. Tadich; B. C.C. Cowie; L. Ley; A. Stacey; C. I. Pakes

doi:10.1063/1.5144093

Development of a silicon-diamond interface on (111) diamond

A. K. Schenk
, M. J. Sear
, N. Dontschuk
, A. Tsai
, K. J. Rietwyk
, A. Tadich
, B. C.C. Cowie
, L. Ley
, A. Stacey
, C. I. Pakes

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.

Original language	English (US)
Article number	071602
Journal	Applied Physics Letters
Volume	116
Issue number	7
DOIs	https://doi.org/10.1063/1.5144093
State	Published - Feb 18 2020
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.5144093

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title = "Development of a silicon-diamond interface on (111) diamond",

abstract = "We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.",

author = "Schenk, \{A. K.\} and Sear, \{M. J.\} and N. Dontschuk and A. Tsai and Rietwyk, \{K. J.\} and A. Tadich and Cowie, \{B. C.C.\} and L. Ley and A. Stacey and Pakes, \{C. I.\}",

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T1 - Development of a silicon-diamond interface on (111) diamond

AU - Schenk, A. K.

AU - Sear, M. J.

AU - Dontschuk, N.

AU - Tsai, A.

AU - Rietwyk, K. J.

AU - Tadich, A.

AU - Cowie, B. C.C.

AU - Ley, L.

AU - Stacey, A.

AU - Pakes, C. I.

PY - 2020/2/18

Y1 - 2020/2/18

N2 - We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.

AB - We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.

UR - https://www.scopus.com/pages/publications/85079742748

UR - https://www.scopus.com/pages/publications/85079742748#tab=citedBy

U2 - 10.1063/1.5144093

DO - 10.1063/1.5144093

M3 - Article

AN - SCOPUS:85079742748

SN - 0003-6951

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071602

ER -

Development of a silicon-diamond interface on (111) diamond

Abstract

All Science Journal Classification (ASJC) codes

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