Abstract
The reaction kinetics between deuterium (D) and fluorine (F) radicals on a photoresists (PR) surface in the absence of ion bombardment was investigated. The abstraction and recombination probabilities from the PR surface were also studied using modulated beam mass spectrometry. It was observed that the probability for a F atom abstracting a D atom is 0.19, while D atoms are incapable of abstracting F atoms from the PR at any detectable rate.
Original language | English (US) |
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Pages (from-to) | 145-153 |
Number of pages | 9 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2002 |
Externally published | Yes |
Event | 6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Napa Valley, CA, United States Duration: Apr 22 2001 → Apr 26 2001 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering