Deuterium and fluorine radical reaction kinetics on photoresist

Frank Greer, J. W. Coburn, David B. Graves

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


The reaction kinetics between deuterium (D) and fluorine (F) radicals on a photoresists (PR) surface in the absence of ion bombardment was investigated. The abstraction and recombination probabilities from the PR surface were also studied using modulated beam mass spectrometry. It was observed that the probability for a F atom abstracting a D atom is 0.19, while D atoms are incapable of abstracting F atoms from the PR at any detectable rate.

Original languageEnglish (US)
Pages (from-to)145-153
Number of pages9
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
StatePublished - Jan 2002
Externally publishedYes
Event6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Napa Valley, CA, United States
Duration: Apr 22 2001Apr 26 2001

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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