Designed organophosphonate self-assembled monolayers enhance device performance of pentacene-based organic thin-film transistors

Kung Ching Liao, Ahmad G. Ismail, Laurent Kreplak, Jeffrey Schwartz, Ian G. Hill

Research output: Contribution to journalArticle

43 Scopus citations

Abstract

(Figure Presented) Excellent device characteristics are measured for a pentacene-based thin film transistor where the SiO2 gate dielectric is terminated with a self-assembled monolayer of 9,10-dinaphthylanthracene-2- phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on the order of the "thickness" of an aromatic π system, which allows intercalation of pentacene units, favoring a π-stacking motif for this first pentacene layer.

Original languageEnglish (US)
Pages (from-to)3081-3085
Number of pages5
JournalAdvanced Materials
Volume22
Issue number28
DOIs
StatePublished - Jul 27 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Designed organophosphonate self-assembled monolayers enhance device performance of pentacene-based organic thin-film transistors'. Together they form a unique fingerprint.

  • Cite this