Abstract
We present the design, fabrication, and impedance measurements of plasma wave detectors fabricated from GaAs/AlGaAs heterostructures. The design principles will allow broadband (dc to 7 GHz) measurements of the device power coupling and responsivity as a detector, which is a "scale model" of a THz plasma wave detector. We demonstrate clear resonance behavior in the impedance spectrum.
Original language | English (US) |
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Article number | 59950M |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5995 |
DOIs | |
State | Published - 2005 |
Externally published | Yes |
Event | Chemical and Biological Standoff Detection III - Boston, MA, United States Duration: Oct 24 2005 → Oct 26 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Keywords
- HEMT
- Plasma wave electronics
- THz