Depth distributions of low energy deuterium implanted into silicon as determined by sims

Keyphrases

• Low Energy 100%
• Deuterium 100%
• Depth Distribution 100%
• Depth Resolution 66%
• Irradiation 33%
• Secondary Ion Mass Spectrometry 33%
• Multicrystalline Silicon 33%
• Large Angle 33%
• Depth Profile 33%
• Surface Normal 33%
• Ta2O5 33%
• High-Z Materials 33%
• Saturation Density 33%
• Projected Range 33%
• (100) Planes 33%
• Depth Profiling 33%
• Silicon Target 33%
• Sputtering Process 33%
• Atomic Mixing 33%

Chemistry

• Silicon 100%
• Deuterium 100%
• Single Crystalline Solid 33%
• Secondary Ion Mass Spectroscopy 33%
• Depth Profiling 33%
• Cesium Ion 33%