Depth distributions of low energy deuterium implanted into silicon as determined by sims

Secondary ion mass spectrometry (SIMS) has been used to determine depth profiles of deuterium implanted into single crystal silicon targets at energies between 0.1 and 5 keV. The atomic mixing inherent in the sputtering process, which directly effects depth resolution, has been reduced by using a bombarding particle of low energy and high Z impacting the sample at a large angle relative to the surface normal (3 keV, Cs⁺, impacting at 60°). Using this procedure, depth resolution of 20 Å at a depth of 800 Å has been obtained in depth profiling of Ta₂O₅ on Ta. Mean projected range and straggling of the implant profiles are in good agreement with calculations when irradiations are performed at 11° from the normal to the (100) plane to prevent channeling. The saturation density of trapped deuterium has also been determined to be 1.4 × 10²² D/cm³.