Deposition of monolayer-scale germanium/silicon heterostructures by rapid thermal chemical vapor deposition

A. St. Amour, J. C. Sturm

Research output: Contribution to journalConference articlepeer-review

Abstract

Deposition of monolayer scale Ge/Si heterostructures by Rapid Thermal Chemical Vapor Deposition has been achieved for the first time. All previous work in this area was by Molecular Beam Epitaxy. We have observed the change in Ge growth rate at 500°C as the Si substrate was covered by the first monolayer of Ge. Auger Electron Spectroscopy and Raman scattering experiments determined that the CVD growth mode for Ge on Si (100) at 550°C is Stranski-Krastanov, with the transition to islanding occurring after three monolayers.

Original languageEnglish (US)
Pages (from-to)31-36
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume342
StatePublished - Jan 1 1994
EventProceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 4 1994Apr 7 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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