Dependence of upper critical field and pairing strength on doping in cuprates

Yayu Wang, S. Ono, Y. Onose, G. Gu, Yoichi Ando, Y. Tokura, S. Uchida, Nai Phuan Ong

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Abstract

We have determined the upper critical field Hc2 as a function of hole concentration in bismuth-based cuprates by measuring the voltage induced by vortex flow in a driving temperature gradient (the Nernst effect), in magnetic fields up to 45 tesla. We found that Hc2 decreased steeply as doping increased, in both single and bilayer cuprates. This relationship implies that the Cooper pairing potential displays a trend opposite to that of the superfluid density versus doping. The coherence length of the pairs ξo closely tracks the gap measured by photoemission. We discuss implications for understanding the doping dependence of the critical temperature Tco.

Original languageEnglish (US)
Pages (from-to)86-89
Number of pages4
JournalScience
Volume299
Issue number5603
DOIs
StatePublished - Jan 3 2003

All Science Journal Classification (ASJC) codes

  • General

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    Wang, Y., Ono, S., Onose, Y., Gu, G., Ando, Y., Tokura, Y., Uchida, S., & Ong, N. P. (2003). Dependence of upper critical field and pairing strength on doping in cuprates. Science, 299(5603), 86-89. https://doi.org/10.1126/science.1078422