Dependence of Transconductance on Substrate BIAS in Ultrathin Silicon-On-Insulator MOS Transistors

J. C. Sturm; K. Tokunaga

doi:10.1049/el:19890827

Dependence of Transconductance on Substrate BIAS in Ultrathin Silicon-On-Insulator MOS Transistors

J. C. Sturm
, K. Tokunaga

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.

Original language	English (US)
Pages (from-to)	1233-1234
Number of pages	2
Journal	Electronics Letters
Volume	25
Issue number	18
DOIs	https://doi.org/10.1049/el:19890827
State	Published - Aug 17 1989

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

MOS structures and devices
Semiconductor devices and materials
Silicon
Transistors

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10.1049/el:19890827

Cite this

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title = "Dependence of Transconductance on Substrate BIAS in Ultrathin Silicon-On-Insulator MOS Transistors",

abstract = "A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.",

keywords = "MOS structures and devices, Semiconductor devices and materials, Silicon, Transistors",

author = "Sturm, \{J. C.\} and K. Tokunaga",

year = "1989",

month = aug,

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doi = "10.1049/el:19890827",

language = "English (US)",

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journal = "Electronics Letters",

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T1 - Dependence of Transconductance on Substrate BIAS in Ultrathin Silicon-On-Insulator MOS Transistors

AU - Sturm, J. C.

AU - Tokunaga, K.

PY - 1989/8/17

Y1 - 1989/8/17

N2 - A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.

AB - A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.

KW - MOS structures and devices

KW - Semiconductor devices and materials

KW - Silicon

KW - Transistors

UR - https://www.scopus.com/pages/publications/0024717335

UR - https://www.scopus.com/pages/publications/0024717335#tab=citedBy

U2 - 10.1049/el:19890827

DO - 10.1049/el:19890827

M3 - Article

AN - SCOPUS:0024717335

SN - 0013-5194

VL - 25

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JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

Dependence of Transconductance on Substrate BIAS in Ultrathin Silicon-On-Insulator MOS Transistors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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