A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Aug 17 1989|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering