Dependence of Transconductance on Substrate BIAS in Ultrathin Silicon-On-Insulator MOS Transistors

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Abstract

A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.

Original languageEnglish (US)
Pages (from-to)1233-1234
Number of pages2
JournalElectronics Letters
Volume25
Issue number18
DOIs
StatePublished - Aug 17 1989

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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