TY - JOUR
T1 - Density functional study of H2 desorption from monohydride and dihydride Si(100) surfaces
AU - Vittadini, A.
AU - Selloni, A.
N1 - Funding Information:
We have benefited from discussions with C. Wu, K.D. Jordan, P. Nachtigall and E.A. Carter. We are particularly grateful to P. Kratzer and J.K. N0rskov for sharing their results with us prior to publication and for helpful discussions. The calculations were done on the NEC-SX3 of the CSCS at Manno (Switzerland), and on the Cray C90 at the Centro di Calcolo Interuniversitario dell'Italia Nord Orientale (CINECA) at Casalecchio di Reno (Italy). This work was in part supported by a computer time grant from CINECA.
PY - 1995/3/24
Y1 - 1995/3/24
N2 - We present a density functional study of H2 adsorption on and desorption from Si(100)2×1 monohydride and Si(100)1×1 dihydride surfaces, carried out using a slab geometry with large supercells. For the monohydride surface we find that two distinct mechanisms - i.e. the recombination of two H atoms sitting either on the same dimer or on adjacent dimers along a row - yield desorption barriers in agreement with experiment. For the dihydride surface, the preferred pathway involves the desorption of two H atoms belonging to the same SiH2 unit. This is followed by a local structural rearrangement, leading to the formation of a surface dimer, and making the overall reaction slightly exothermic. The corresponding adsorption barrier, ≈ 2 eV, is large with respect to that inferred from desorption experiments.
AB - We present a density functional study of H2 adsorption on and desorption from Si(100)2×1 monohydride and Si(100)1×1 dihydride surfaces, carried out using a slab geometry with large supercells. For the monohydride surface we find that two distinct mechanisms - i.e. the recombination of two H atoms sitting either on the same dimer or on adjacent dimers along a row - yield desorption barriers in agreement with experiment. For the dihydride surface, the preferred pathway involves the desorption of two H atoms belonging to the same SiH2 unit. This is followed by a local structural rearrangement, leading to the formation of a surface dimer, and making the overall reaction slightly exothermic. The corresponding adsorption barrier, ≈ 2 eV, is large with respect to that inferred from desorption experiments.
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U2 - 10.1016/0009-2614(95)00129-R
DO - 10.1016/0009-2614(95)00129-R
M3 - Article
AN - SCOPUS:0001001041
SN - 0009-2614
VL - 235
SP - 334
EP - 340
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 3-4
ER -