Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies

H. Zhu; K. Lai; D. C. Tsui; S. P. Bayrakci; N. P. Ong; M. Manfra; L. Pfeiffer; K. West

doi:10.1016/j.ssc.2006.12.006

Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies

H. Zhu, K. Lai, D. C. Tsui, S. P. Bayrakci, N. P. Ong, M. Manfra, L. Pfeiffer, K. West

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Cyclotron resonance at microwave frequencies is used to measure the band mass (m_b) of the two-dimensional holes (2DHs) in carbon-doped (100) GaAs/ Al_xGa_1-xAs heterostructures. The measured m_b shows strong dependences on both the 2DH density (p) and the GaAs quantum well width (W). For a fixed W, in the density range (0.4×10¹¹ to 1.1×10¹¹ cm^-2) studied here, m_b increases with p, consistently with previous studies of the 2DHs on the (311)A surface. For a fixed p = 1.1 × 10¹¹ cm^{- 2}, m_b increases from 0.22 m_e at W = 10 nm to 0.50 m_e at W = 30 nm, and saturates around 0.51 m_e for W > 30 nm.

Original language	English (US)
Pages (from-to)	510-513
Number of pages	4
Journal	Solid State Communications
Volume	141
Issue number	9
DOIs	https://doi.org/10.1016/j.ssc.2006.12.006
State	Published - Mar 2007

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

A. Semiconductors
D. Cyclotron resonance

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10.1016/j.ssc.2006.12.006

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@article{301a8c1135d74dca812b02e677990abc,

title = "Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies",

abstract = "Cyclotron resonance at microwave frequencies is used to measure the band mass (mb) of the two-dimensional holes (2DHs) in carbon-doped (100) GaAs/ AlxGa1-xAs heterostructures. The measured mb shows strong dependences on both the 2DH density (p) and the GaAs quantum well width (W). For a fixed W, in the density range (0.4×1011 to 1.1×1011 cm-2) studied here, mb increases with p, consistently with previous studies of the 2DHs on the (311)A surface. For a fixed p = 1.1 × 1011 cm- 2, mb increases from 0.22 me at W = 10 nm to 0.50 me at W = 30 nm, and saturates around 0.51 me for W > 30 nm.",

keywords = "A. Semiconductors, D. Cyclotron resonance",

author = "H. Zhu and K. Lai and Tsui, {D. C.} and Bayrakci, {S. P.} and Ong, {N. P.} and M. Manfra and L. Pfeiffer and K. West",

note = "Funding Information: The authors would like to thank Wei Pan, Minhyea Lee, and Lu Li for helpful discussions and experimental assistance. The work at Princeton was supported by the NSF. S.P.B. and N.P.O. acknowledge support from NSF MRSEC grant DMR 0213706.",

year = "2007",

month = mar,

doi = "10.1016/j.ssc.2006.12.006",

language = "English (US)",

volume = "141",

pages = "510--513",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "9",

}

TY - JOUR

T1 - Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies

AU - Zhu, H.

AU - Lai, K.

AU - Tsui, D. C.

AU - Bayrakci, S. P.

AU - Ong, N. P.

AU - Manfra, M.

AU - Pfeiffer, L.

AU - West, K.

N1 - Funding Information: The authors would like to thank Wei Pan, Minhyea Lee, and Lu Li for helpful discussions and experimental assistance. The work at Princeton was supported by the NSF. S.P.B. and N.P.O. acknowledge support from NSF MRSEC grant DMR 0213706.

PY - 2007/3

Y1 - 2007/3

N2 - Cyclotron resonance at microwave frequencies is used to measure the band mass (mb) of the two-dimensional holes (2DHs) in carbon-doped (100) GaAs/ AlxGa1-xAs heterostructures. The measured mb shows strong dependences on both the 2DH density (p) and the GaAs quantum well width (W). For a fixed W, in the density range (0.4×1011 to 1.1×1011 cm-2) studied here, mb increases with p, consistently with previous studies of the 2DHs on the (311)A surface. For a fixed p = 1.1 × 1011 cm- 2, mb increases from 0.22 me at W = 10 nm to 0.50 me at W = 30 nm, and saturates around 0.51 me for W > 30 nm.

AB - Cyclotron resonance at microwave frequencies is used to measure the band mass (mb) of the two-dimensional holes (2DHs) in carbon-doped (100) GaAs/ AlxGa1-xAs heterostructures. The measured mb shows strong dependences on both the 2DH density (p) and the GaAs quantum well width (W). For a fixed W, in the density range (0.4×1011 to 1.1×1011 cm-2) studied here, mb increases with p, consistently with previous studies of the 2DHs on the (311)A surface. For a fixed p = 1.1 × 1011 cm- 2, mb increases from 0.22 me at W = 10 nm to 0.50 me at W = 30 nm, and saturates around 0.51 me for W > 30 nm.

KW - A. Semiconductors

KW - D. Cyclotron resonance

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U2 - 10.1016/j.ssc.2006.12.006

DO - 10.1016/j.ssc.2006.12.006

M3 - Article

AN - SCOPUS:33846216974

SN - 0038-1098

VL - 141

SP - 510

EP - 513

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies

Abstract

All Science Journal Classification (ASJC) codes

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