Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies

H. Zhu, K. Lai, D. C. Tsui, S. P. Bayrakci, Nai Phuan Ong, M. Manfra, L. Pfeiffer, K. West

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Abstract

Cyclotron resonance at microwave frequencies is used to measure the band mass (mb) of the two-dimensional holes (2DHs) in carbon-doped (100) GaAs/ AlxGa1-xAs heterostructures. The measured mb shows strong dependences on both the 2DH density (p) and the GaAs quantum well width (W). For a fixed W, in the density range (0.4×1011 to 1.1×1011 cm-2) studied here, mb increases with p, consistently with previous studies of the 2DHs on the (311)A surface. For a fixed p = 1.1 × 1011 cm- 2, mb increases from 0.22 me at W = 10 nm to 0.50 me at W = 30 nm, and saturates around 0.51 me for W > 30 nm.

Original languageEnglish (US)
Pages (from-to)510-513
Number of pages4
JournalSolid State Communications
Volume141
Issue number9
DOIs
StatePublished - Mar 1 2007

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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