Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography

R. R. Li, P. D. Dapkus, M. E. Thompson, W. G. Jeong, C. Harrison, P. M. Chaikin, R. A. Register, D. H. Adamson

Research output: Contribution to journalArticlepeer-review

255 Scopus citations

Abstract

GaAs has been selectively grown in a hexagonally ordered array of nanometer-scale holes with a density as high as ∼ 1011/cm2 by metalorganic chemical vapor deposition. This array of holes was created using block copolynier lithography, in which a thin layer of diblock copolymer was used as an etching mask to make dense holes in a 15-nm-thick SiNχ film. These selectively grown nanoscale features are estimated to be 23 nm in diameter with narrow lateral size and height distributions as charaeterized by field-emission scanning electron microscopy and tapping mode atomic force microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots we report offer potential advantages over self-assembled dots grown by the Stranski-Krastanow mode.

Original languageEnglish (US)
Pages (from-to)1689-1691
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number13
DOIs
StatePublished - Mar 27 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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