Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

G. De Simoni, A. Singha, M. Gibertini, B. Karmakar, M. Polini, V. Piazza, L. N. Pfeiffer, K. W. West, F. Beltram, V. Pellegrini

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.

Original languageEnglish (US)
Article number132113
JournalApplied Physics Letters
Issue number13
StatePublished - Sep 27 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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