Degenerate versus semidegenerate transport in a correlated two-dimensional hole system

Richard L.J. Qiu, Xuan P.A. Gao, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


It has been puzzling that the resistivity of high-mobility two-dimensional (2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature T is raised above a characteristic temperature comparable with the Fermi temperature TF. We find that the metallic 2D hole system in a GaAs quantum well has a linear density- (p-) dependent conductivity σeμ*(p-p 0) in both the degenerate (TTF) and semidegenerate (T~TF) regimes. The T dependence of σ(p) suggests that the metallic conduction dσ/dT<0 at low T is associated with the increase in μ*, the effective mobility of itinerant carriers. However, the resistivity decrease in the semidegenerate regime T>TF originates from the reduced p0, the density of immobile carriers in a two-phase picture.

Original languageEnglish (US)
Article number193301
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
StatePublished - May 9 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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