Defects and high bulk resistivities in the Bi-rich tetradymite topological insulator Bi 2+xTe 2-xSe

Shuang Jia, Haim Beidenkopf, Ilya Drozdov, M. K. Fuccillo, Jungpil Seo, Jun Xiong, Nai Phuan Ong, Ali Yazdani, Robert Joseph Cava

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


Defects in the topological insulator Bi 2Te 2Se are studied by scanning tunneling microscopy. Small numbers of Te Bi antisite defects are found and are postulated to be the origin of n-type carriers in this tetradymite composition near the n-to-p crossover. Based on this defect chemistry, we design an alternative method for obtaining resistive Bi 2+xTe 2-xSe samples, by the introduction of compensating p-type carriers through Bi Te antisite defects induced by making the material slightly Bi rich. Our resistivity and Hall coefficient measurements of Bi 2+xTe 2-xSe crystals grown by the Bridgeman-Stockbarger method show that the carrier concentration at base temperature is significantly reduced from that of stoichiometric samples. Analysis of the measurements reveals the possible underlying chemical distribution along the boules during growth.

Original languageEnglish (US)
Article number165119
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - Oct 12 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Defects and high bulk resistivities in the Bi-rich tetradymite topological insulator Bi <sub>2+x</sub>Te <sub>2-x</sub>Se'. Together they form a unique fingerprint.

Cite this