Defects and high bulk resistivities in the Bi-rich tetradymite topological insulator Bi 2+xTe 2-xSe

Shuang Jia; Haim Beidenkopf; Ilya Drozdov; M. K. Fuccillo; Jungpil Seo; Jun Xiong; N. P. Ong; Ali Yazdani; R. J. Cava

doi:10.1103/PhysRevB.86.165119

Defects and high bulk resistivities in the Bi-rich tetradymite topological insulator Bi _2+xTe _2-xSe

Shuang Jia, Haim Beidenkopf, Ilya Drozdov, M. K. Fuccillo, Jungpil Seo, Jun Xiong, N. P. Ong, Ali Yazdani, R. J. Cava

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68 Scopus citations

Abstract

Defects in the topological insulator Bi ₂Te ₂Se are studied by scanning tunneling microscopy. Small numbers of Te _Bi antisite defects are found and are postulated to be the origin of n-type carriers in this tetradymite composition near the n-to-p crossover. Based on this defect chemistry, we design an alternative method for obtaining resistive Bi _2+xTe _2-xSe samples, by the introduction of compensating p-type carriers through Bi _Te antisite defects induced by making the material slightly Bi rich. Our resistivity and Hall coefficient measurements of Bi _2+xTe _2-xSe crystals grown by the Bridgeman-Stockbarger method show that the carrier concentration at base temperature is significantly reduced from that of stoichiometric samples. Analysis of the measurements reveals the possible underlying chemical distribution along the boules during growth.

Original language	English (US)
Article number	165119
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.86.165119
State	Published - Oct 12 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.86.165119

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title = "Defects and high bulk resistivities in the Bi-rich tetradymite topological insulator Bi 2+xTe 2-xSe",

abstract = "Defects in the topological insulator Bi 2Te 2Se are studied by scanning tunneling microscopy. Small numbers of Te Bi antisite defects are found and are postulated to be the origin of n-type carriers in this tetradymite composition near the n-to-p crossover. Based on this defect chemistry, we design an alternative method for obtaining resistive Bi 2+xTe 2-xSe samples, by the introduction of compensating p-type carriers through Bi Te antisite defects induced by making the material slightly Bi rich. Our resistivity and Hall coefficient measurements of Bi 2+xTe 2-xSe crystals grown by the Bridgeman-Stockbarger method show that the carrier concentration at base temperature is significantly reduced from that of stoichiometric samples. Analysis of the measurements reveals the possible underlying chemical distribution along the boules during growth.",

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T1 - Defects and high bulk resistivities in the Bi-rich tetradymite topological insulator Bi 2+xTe 2-xSe

AU - Jia, Shuang

AU - Beidenkopf, Haim

AU - Drozdov, Ilya

AU - Fuccillo, M. K.

AU - Seo, Jungpil

AU - Xiong, Jun

AU - Ong, N. P.

AU - Yazdani, Ali

AU - Cava, R. J.

PY - 2012/10/12

Y1 - 2012/10/12

N2 - Defects in the topological insulator Bi 2Te 2Se are studied by scanning tunneling microscopy. Small numbers of Te Bi antisite defects are found and are postulated to be the origin of n-type carriers in this tetradymite composition near the n-to-p crossover. Based on this defect chemistry, we design an alternative method for obtaining resistive Bi 2+xTe 2-xSe samples, by the introduction of compensating p-type carriers through Bi Te antisite defects induced by making the material slightly Bi rich. Our resistivity and Hall coefficient measurements of Bi 2+xTe 2-xSe crystals grown by the Bridgeman-Stockbarger method show that the carrier concentration at base temperature is significantly reduced from that of stoichiometric samples. Analysis of the measurements reveals the possible underlying chemical distribution along the boules during growth.

AB - Defects in the topological insulator Bi 2Te 2Se are studied by scanning tunneling microscopy. Small numbers of Te Bi antisite defects are found and are postulated to be the origin of n-type carriers in this tetradymite composition near the n-to-p crossover. Based on this defect chemistry, we design an alternative method for obtaining resistive Bi 2+xTe 2-xSe samples, by the introduction of compensating p-type carriers through Bi Te antisite defects induced by making the material slightly Bi rich. Our resistivity and Hall coefficient measurements of Bi 2+xTe 2-xSe crystals grown by the Bridgeman-Stockbarger method show that the carrier concentration at base temperature is significantly reduced from that of stoichiometric samples. Analysis of the measurements reveals the possible underlying chemical distribution along the boules during growth.

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Defects and high bulk resistivities in the Bi-rich tetradymite topological insulator Bi _2+xTe _2-xSe

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