DEFECT STRUCTURE AND DYNAMICS IN SILICON.

S. T. Pantelides, Roberto Car, P. J. Kelly, A. Oshiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages7-11
Number of pages5
ISBN (Print)0931837286
StatePublished - Dec 1 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume63
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Pantelides, S. T., Car, R., Kelly, P. J., & Oshiyama, A. (1986). DEFECT STRUCTURE AND DYNAMICS IN SILICON. In Materials Research Society Symposia Proceedings (pp. 7-11). (Materials Research Society Symposia Proceedings; Vol. 63). Materials Research Soc.