@inproceedings{9d2fb008248146bbb762b6bbc2638ef3,
title = "DEFECT STRUCTURE AND DYNAMICS IN SILICON.",
abstract = "This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.",
author = "Pantelides, {S. T.} and Roberto Car and Kelly, {P. J.} and A. Oshiyama",
year = "1986",
language = "English (US)",
isbn = "0931837286",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "7--11",
booktitle = "Materials Research Society Symposia Proceedings",
}