Defect-mediated carbon incorporation in the Si(0 0 1) surface: Role of stress and carbon-defect interactions

Ph Sonnet, L. Stauffer, Annabella Selloni, P. C. Kelires

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We present a comparative theoretical study of carbon incorporation on the Si(001) surface with and without Si defects, such as parallel and perpendicular ad-dimers or dimer vacancies. The influence of different parameters such as surface reconstruction, local stress before and after carbon adsorption and carbon-defect interaction are investigated. We find that ad-dimers or dimer vacancies make carbon incorporation easier, which can be explained by taking the above parameters into account in a systematic and combined way. The energetic barrier found for the defect-free surface at the crossing of the second layer is substantially lowered or vanishes. The site located just below the defect (in the third or fourth layers in the ad-dimer and dimer vacancy cases, respectively) is favored, and the site located in the middle between two defects plays a particular role.

Original languageEnglish (US)
Pages (from-to)277-284
Number of pages8
JournalSurface Science
Issue number2-3
StatePublished - Oct 20 2003

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


  • Carbon
  • Density functional calculations
  • Monte Carlo simulations
  • Semiconducting surfaces
  • Surface stress


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