Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition

C. W. Liu, A. St Amour, J. C. Sturm, Y. R.J. Lacroix, M. L.W. Thewalt

Research output: Contribution to journalConference article

Abstract

The defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.

Original languageEnglish (US)
Pages (from-to)441-446
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume379
DOIs
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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