Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition

C. W. Liu; A. St Amour; J. C. Sturm; Y. R.J. Lacroix; M. L.W. Thewalt

doi:10.1557/proc-379-441

Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition

C. W. Liu, A. St Amour, J. C. Sturm, Y. R.J. Lacroix, M. L.W. Thewalt

Research output: Contribution to journal › Conference article › peer-review

Abstract

The defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.

Original language	English (US)
Pages (from-to)	441-446
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	379
DOIs	https://doi.org/10.1557/proc-379-441
State	Published - 1995
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 21 1995

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{b55ac2525ee3402689fb5f4de7497e0c,

title = "Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition",

abstract = "The defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.",

author = "Liu, {C. W.} and Amour, {A. St} and Sturm, {J. C.} and Lacroix, {Y. R.J.} and Thewalt, {M. L.W.}",

year = "1995",

doi = "10.1557/proc-379-441",

language = "English (US)",

volume = "379",

pages = "441--446",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 17-04-1995 Through 21-04-1995",

}

TY - JOUR

T1 - Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition

AU - Liu, C. W.

AU - Amour, A. St

AU - Sturm, J. C.

AU - Lacroix, Y. R.J.

AU - Thewalt, M. L.W.

PY - 1995

Y1 - 1995

N2 - The defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.

AB - The defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.

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U2 - 10.1557/proc-379-441

DO - 10.1557/proc-379-441

M3 - Conference article

AN - SCOPUS:0029514161

SN - 0272-9172

VL - 379

SP - 441

EP - 446

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 21 April 1995

ER -

Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition

Abstract

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