Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)

A. St. Amour; C. W. Liu; J. C. Sturm; Y. Lacroix; M. L.W. Thewalt

doi:10.1063/1.115316

Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si_1-x-yGe_xC_y alloy layers on Si (100)

A. St. Amour, C. W. Liu, J. C. Sturm, Y. Lacroix, M. L.W. Thewalt

Research output: Contribution to journal › Article › peer-review

109 Scopus citations

Abstract

Pseudomorphic Si_1-x-yGe_xC_y alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain-compensated Si_1-x-yGe_xC_y layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si _1-x-yGe_xC_y alloys.

Original language	English (US)
Pages (from-to)	3915
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115316
State	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)",

abstract = "Pseudomorphic Si1-x-yGexCy alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain-compensated Si1-x-yGexCy layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si 1-x-yGexCy alloys.",

author = "\{St. Amour\}, A. and Liu, \{C. W.\} and Sturm, \{J. C.\} and Y. Lacroix and Thewalt, \{M. L.W.\}",

year = "1995",

doi = "10.1063/1.115316",

language = "English (US)",

volume = "67",

pages = "3915",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)

AU - St. Amour, A.

AU - Liu, C. W.

AU - Sturm, J. C.

AU - Lacroix, Y.

AU - Thewalt, M. L.W.

PY - 1995

Y1 - 1995

N2 - Pseudomorphic Si1-x-yGexCy alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain-compensated Si1-x-yGexCy layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si 1-x-yGexCy alloys.

AB - Pseudomorphic Si1-x-yGexCy alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain-compensated Si1-x-yGexCy layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si 1-x-yGexCy alloys.

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si_1-x-yGe_xC_y alloy layers on Si (100)

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