Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)

A. St. Amour, C. W. Liu, J. C. Sturm, Y. Lacroix, M. L.W. Thewalt

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Abstract

Pseudomorphic Si1-x-yGexCy alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain-compensated Si1-x-yGexCy layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si 1-x-yGexCy alloys.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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