Abstract
The fabrication and characterisation of deeply-etched singlemode GeSi rib waveguides, grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of ~ 2·5 ± 1 dB/cm at 1·3 μm.
Original language | English (US) |
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Pages (from-to) | 1434-1435 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 28 |
Issue number | 15 |
DOIs | |
State | Published - Jul 16 1992 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering