Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration

Y. M. Liu; Paul Richard Prucnal

doi:10.1049/el:19920912

Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration

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Abstract

The fabrication and characterisation of deeply-etched singlemode GeSi rib waveguides, grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of ~ 2·5 ± 1 dB/cm at 1·3 μm.

Original language	English (US)
Pages (from-to)	1434-1435
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	15
DOIs	https://doi.org/10.1049/el:19920912
State	Published - Jul 16 1992

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19920912

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title = "Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration",

abstract = "The fabrication and characterisation of deeply-etched singlemode GeSi rib waveguides, grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of ~ 2·5 ± 1 dB/cm at 1·3 μm.",

author = "Liu, {Y. M.} and Prucnal, {Paul Richard}",

year = "1992",

month = jul,

day = "16",

doi = "10.1049/el:19920912",

language = "English (US)",

volume = "28",

pages = "1434--1435",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "15",

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T1 - Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration

AU - Liu, Y. M.

AU - Prucnal, Paul Richard

PY - 1992/7/16

Y1 - 1992/7/16

N2 - The fabrication and characterisation of deeply-etched singlemode GeSi rib waveguides, grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of ~ 2·5 ± 1 dB/cm at 1·3 μm.

AB - The fabrication and characterisation of deeply-etched singlemode GeSi rib waveguides, grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of ~ 2·5 ± 1 dB/cm at 1·3 μm.

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U2 - 10.1049/el:19920912

DO - 10.1049/el:19920912

M3 - Article

AN - SCOPUS:0026897404

SN - 0013-5194

VL - 28

SP - 1434

EP - 1435

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration

Abstract

All Science Journal Classification (ASJC) codes

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