The fabrication and characterisation of deeply-etched singlemode GeSi rib waveguides, grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of ~ 2·5 ± 1 dB/cm at 1·3 μm.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Jul 16 1992|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering