Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration

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Abstract

The fabrication and characterisation of deeply-etched singlemode GeSi rib waveguides, grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of ~ 2·5 ± 1 dB/cm at 1·3 μm.

Original languageEnglish (US)
Pages (from-to)1434-1435
Number of pages2
JournalElectronics Letters
Volume28
Issue number15
DOIs
StatePublished - Jul 16 1992

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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