Deep photoluminescence in Si/Si1-xGex/Si quantum wells created by ion implantation and annealing

J. C. Sturm, A. St Amour, Y. Lacroix, M. L.W. Thewalt

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Strong broad photoluminescence similar to that observed in some materials grown by molecular beam epitaxy (MBE) has been observed in Si/Si 1-xGex/Si quantum wells grown by chemical vapor deposition. As grown, the samples exhibited SiGe band-edge phonon-resolved bound-exciton luminescence, but after being self-implanted with silicon and annealed at 600°C, a deep broad luminescence band 80-100 meV below the excitonic gap was observed. This strong luminescence disappeared with an 800°C anneal and had a pump power and temperature dependence similar to that observed in MBE samples. This is the first time that such luminescence has been observed in material other than that grown by MBE.

Original languageEnglish (US)
Pages (from-to)2291-2293
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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