Abstract
n-Doping of copper phthalocyanine (CuPc), which has an electron affinity (EA) of 3.52 eV, by decamethylcobaltocene (DMC) is demonstrated. DMC has a remarkably low solid-state ionization energy (IE) of 3.3 eV, as measured by ultra-violet photoemission spectroscopy (UPS). Further UPS measurements show a large 1.4 eV upward shift of the Fermi-level within the single particle gap of CuPc between the p- and n-doped films. n-Doping is also confirmed by current-voltage (I-V) measurements, which show a 106-fold increase in current density due to improved electron injection and enhanced conductivity of the bulk film. An organic p-i-n CuPc homojunction is also fabricated using F4-TCNQ and DMC as p- and n-dopants, respectively. Current-voltage characteristics demonstrate excellent rectification with a turn on voltage of approximately 1.3 eV, which is consistent with the built-in voltage measured by UPS and capacitance-voltage (C-V) measurements.
Original language | English (US) |
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Pages (from-to) | 575-581 |
Number of pages | 7 |
Journal | Organic Electronics |
Volume | 9 |
Issue number | 5 |
DOIs | |
State | Published - Oct 2008 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Keywords
- Metallocene
- Organic semiconductor
- Photoemission spectroscopy
- Phthalocyanine
- n-Type doping