TY - JOUR
T1 - Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices
AU - Chan, Calvin K.
AU - Zhao, Wei
AU - Barlow, Stephen
AU - Marder, Seth
AU - Kahn, Antoine
N1 - Funding Information:
Support of this work by the National Science Foundation (DMR-0705920) and the Princeton MRSEC of the National Science Foundation (DMR-0213706) is gratefully acknowledged. Work at the Georgia Institute of Technology was supported in part by the STC Program of the National Science Foundation under Agreement Number DMR-0120967), and by the Office of Naval Research (N00014-04-1-0120).
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2008/10
Y1 - 2008/10
N2 - n-Doping of copper phthalocyanine (CuPc), which has an electron affinity (EA) of 3.52 eV, by decamethylcobaltocene (DMC) is demonstrated. DMC has a remarkably low solid-state ionization energy (IE) of 3.3 eV, as measured by ultra-violet photoemission spectroscopy (UPS). Further UPS measurements show a large 1.4 eV upward shift of the Fermi-level within the single particle gap of CuPc between the p- and n-doped films. n-Doping is also confirmed by current-voltage (I-V) measurements, which show a 106-fold increase in current density due to improved electron injection and enhanced conductivity of the bulk film. An organic p-i-n CuPc homojunction is also fabricated using F4-TCNQ and DMC as p- and n-dopants, respectively. Current-voltage characteristics demonstrate excellent rectification with a turn on voltage of approximately 1.3 eV, which is consistent with the built-in voltage measured by UPS and capacitance-voltage (C-V) measurements.
AB - n-Doping of copper phthalocyanine (CuPc), which has an electron affinity (EA) of 3.52 eV, by decamethylcobaltocene (DMC) is demonstrated. DMC has a remarkably low solid-state ionization energy (IE) of 3.3 eV, as measured by ultra-violet photoemission spectroscopy (UPS). Further UPS measurements show a large 1.4 eV upward shift of the Fermi-level within the single particle gap of CuPc between the p- and n-doped films. n-Doping is also confirmed by current-voltage (I-V) measurements, which show a 106-fold increase in current density due to improved electron injection and enhanced conductivity of the bulk film. An organic p-i-n CuPc homojunction is also fabricated using F4-TCNQ and DMC as p- and n-dopants, respectively. Current-voltage characteristics demonstrate excellent rectification with a turn on voltage of approximately 1.3 eV, which is consistent with the built-in voltage measured by UPS and capacitance-voltage (C-V) measurements.
KW - Metallocene
KW - Organic semiconductor
KW - Photoemission spectroscopy
KW - Phthalocyanine
KW - n-Type doping
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U2 - 10.1016/j.orgel.2008.03.003
DO - 10.1016/j.orgel.2008.03.003
M3 - Article
AN - SCOPUS:49249112449
SN - 1566-1199
VL - 9
SP - 575
EP - 581
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 5
ER -