Cyclotron resonance of electrons in Si n-inversion layers at low densities: Many-body effects or localization?

J. P. Cheng; N. C. Jarosik; B. D. McCombe; K. C. Woo

doi:10.1016/0039-6028(88)90693-0

Cyclotron resonance of electrons in Si n-inversion layers at low densities: Many-body effects or localization?

J. P. Cheng, N. C. Jarosik, B. D. McCombe, K. C. Woo

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A systematic investigation of electron cyclotron resonance on a series of Si MOS devices with surface vicinal to (100) and mobilities differing by a factor of two has been carried out at low temperatures and low densities. A multiple-line structure has been observed; the center of gravity and the overall linewidth show the same qualitative behavior as earlier work. Varying the surface crystallographic plane has little effect on these qualitative features. The poorer mobility sample shows larger frequency shifts which indicate the importance of localization.

Original language	English (US)
Pages (from-to)	268-272
Number of pages	5
Journal	Surface Science
Volume	196
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(88)90693-0
State	Published - 1988
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(88)90693-0

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title = "Cyclotron resonance of electrons in Si n-inversion layers at low densities: Many-body effects or localization?",

abstract = "A systematic investigation of electron cyclotron resonance on a series of Si MOS devices with surface vicinal to (100) and mobilities differing by a factor of two has been carried out at low temperatures and low densities. A multiple-line structure has been observed; the center of gravity and the overall linewidth show the same qualitative behavior as earlier work. Varying the surface crystallographic plane has little effect on these qualitative features. The poorer mobility sample shows larger frequency shifts which indicate the importance of localization.",

author = "Cheng, {J. P.} and Jarosik, {N. C.} and McCombe, {B. D.} and Woo, {K. C.}",

year = "1988",

doi = "10.1016/0039-6028(88)90693-0",

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journal = "Surface Science",

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T1 - Cyclotron resonance of electrons in Si n-inversion layers at low densities

T2 - Many-body effects or localization?

AU - Cheng, J. P.

AU - Jarosik, N. C.

AU - McCombe, B. D.

AU - Woo, K. C.

PY - 1988

Y1 - 1988

N2 - A systematic investigation of electron cyclotron resonance on a series of Si MOS devices with surface vicinal to (100) and mobilities differing by a factor of two has been carried out at low temperatures and low densities. A multiple-line structure has been observed; the center of gravity and the overall linewidth show the same qualitative behavior as earlier work. Varying the surface crystallographic plane has little effect on these qualitative features. The poorer mobility sample shows larger frequency shifts which indicate the importance of localization.

AB - A systematic investigation of electron cyclotron resonance on a series of Si MOS devices with surface vicinal to (100) and mobilities differing by a factor of two has been carried out at low temperatures and low densities. A multiple-line structure has been observed; the center of gravity and the overall linewidth show the same qualitative behavior as earlier work. Varying the surface crystallographic plane has little effect on these qualitative features. The poorer mobility sample shows larger frequency shifts which indicate the importance of localization.

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JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Cyclotron resonance of electrons in Si n-inversion layers at low densities: Many-body effects or localization?

Abstract

All Science Journal Classification (ASJC) codes

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