Cyclotron resonance in undoped, top-gated heterostructures

R. J. Heron; R. A. Lewis; R. G. Clark; R. P. Starrett; B. E. Kane; G. R. Facer; N. E. Lumpkin; D. G. Rickel; L. N. Pfeiffer; K. W. West

doi:10.1088/0268-1242/15/6/318

Cyclotron resonance in undoped, top-gated heterostructures

R. J. Heron
, R. A. Lewis
, R. G. Clark
, R. P. Starrett
, B. E. Kane
, G. R. Facer
, N. E. Lumpkin
, D. G. Rickel
, L. N. Pfeiffer
, K. W. West

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on cyclotron resonance detected by far-infrared photoconductivity of the two-dimensional electron gas formed in undoped, top-gated GaAs/Al_0.3Ga_0.7As heterostructures. The photoconductivity method demonstrated here is readily extendable to quantum wires. The top-gated device architecture avoids the disorder inherent in conventional modulation-doped devices and allows precise in situ tuning of carrier density over two orders of magnitude. We observe very sharp resonances (6 mT at 1.5 K) indicating a very high mobility, which is attributed to the low level of impurities. The variation of the linewidth at small filling factor is also consistent with a low concentration of impurities. These results suggest that the filling-factor-dependent oscillations observed in linewidth are not due to the screening of ionized impurities. Filling-factor-dependent oscillations in photoconductivity intensity are also observed, with maxima occurring at even filling factors.

Original language	English (US)
Pages (from-to)	589-592
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	15
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/15/6/318
State	Published - Jun 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/15/6/318

Cite this

@article{a017c4b1d24d40299eced29968e1f6f0,

title = "Cyclotron resonance in undoped, top-gated heterostructures",

abstract = "We report on cyclotron resonance detected by far-infrared photoconductivity of the two-dimensional electron gas formed in undoped, top-gated GaAs/Al0.3Ga0.7As heterostructures. The photoconductivity method demonstrated here is readily extendable to quantum wires. The top-gated device architecture avoids the disorder inherent in conventional modulation-doped devices and allows precise in situ tuning of carrier density over two orders of magnitude. We observe very sharp resonances (6 mT at 1.5 K) indicating a very high mobility, which is attributed to the low level of impurities. The variation of the linewidth at small filling factor is also consistent with a low concentration of impurities. These results suggest that the filling-factor-dependent oscillations observed in linewidth are not due to the screening of ionized impurities. Filling-factor-dependent oscillations in photoconductivity intensity are also observed, with maxima occurring at even filling factors.",

author = "Heron, \{R. J.\} and Lewis, \{R. A.\} and Clark, \{R. G.\} and Starrett, \{R. P.\} and Kane, \{B. E.\} and Facer, \{G. R.\} and Lumpkin, \{N. E.\} and Rickel, \{D. G.\} and Pfeiffer, \{L. N.\} and West, \{K. W.\}",

year = "2000",

month = jun,

doi = "10.1088/0268-1242/15/6/318",

language = "English (US)",

volume = "15",

pages = "589--592",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Cyclotron resonance in undoped, top-gated heterostructures

AU - Heron, R. J.

AU - Lewis, R. A.

AU - Clark, R. G.

AU - Starrett, R. P.

AU - Kane, B. E.

AU - Facer, G. R.

AU - Lumpkin, N. E.

AU - Rickel, D. G.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2000/6

Y1 - 2000/6

N2 - We report on cyclotron resonance detected by far-infrared photoconductivity of the two-dimensional electron gas formed in undoped, top-gated GaAs/Al0.3Ga0.7As heterostructures. The photoconductivity method demonstrated here is readily extendable to quantum wires. The top-gated device architecture avoids the disorder inherent in conventional modulation-doped devices and allows precise in situ tuning of carrier density over two orders of magnitude. We observe very sharp resonances (6 mT at 1.5 K) indicating a very high mobility, which is attributed to the low level of impurities. The variation of the linewidth at small filling factor is also consistent with a low concentration of impurities. These results suggest that the filling-factor-dependent oscillations observed in linewidth are not due to the screening of ionized impurities. Filling-factor-dependent oscillations in photoconductivity intensity are also observed, with maxima occurring at even filling factors.

AB - We report on cyclotron resonance detected by far-infrared photoconductivity of the two-dimensional electron gas formed in undoped, top-gated GaAs/Al0.3Ga0.7As heterostructures. The photoconductivity method demonstrated here is readily extendable to quantum wires. The top-gated device architecture avoids the disorder inherent in conventional modulation-doped devices and allows precise in situ tuning of carrier density over two orders of magnitude. We observe very sharp resonances (6 mT at 1.5 K) indicating a very high mobility, which is attributed to the low level of impurities. The variation of the linewidth at small filling factor is also consistent with a low concentration of impurities. These results suggest that the filling-factor-dependent oscillations observed in linewidth are not due to the screening of ionized impurities. Filling-factor-dependent oscillations in photoconductivity intensity are also observed, with maxima occurring at even filling factors.

UR - https://www.scopus.com/pages/publications/0033688276

UR - https://www.scopus.com/pages/publications/0033688276#tab=citedBy

U2 - 10.1088/0268-1242/15/6/318

DO - 10.1088/0268-1242/15/6/318

M3 - Article

AN - SCOPUS:0033688276

SN - 0268-1242

VL - 15

SP - 589

EP - 592

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

Cyclotron resonance in undoped, top-gated heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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