Cyclotron resonance in undoped, top-gated heterostructures

R. J. Heron; R. A. Lewis; R. G. Clark; R. P. Starrett; B. E. Kane; G. R. Facer; N. E. Lumpkin; D. G. Rickel; L. N. Pfeiffer; K. W. West

doi:10.1088/0268-1242/15/6/318

Cyclotron resonance in undoped, top-gated heterostructures

R. J. Heron, R. A. Lewis, R. G. Clark, R. P. Starrett, B. E. Kane, G. R. Facer, N. E. Lumpkin, D. G. Rickel, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on cyclotron resonance detected by far-infrared photoconductivity of the two-dimensional electron gas formed in undoped, top-gated GaAs/Al_0.3Ga_0.7As heterostructures. The photoconductivity method demonstrated here is readily extendable to quantum wires. The top-gated device architecture avoids the disorder inherent in conventional modulation-doped devices and allows precise in situ tuning of carrier density over two orders of magnitude. We observe very sharp resonances (6 mT at 1.5 K) indicating a very high mobility, which is attributed to the low level of impurities. The variation of the linewidth at small filling factor is also consistent with a low concentration of impurities. These results suggest that the filling-factor-dependent oscillations observed in linewidth are not due to the screening of ionized impurities. Filling-factor-dependent oscillations in photoconductivity intensity are also observed, with maxima occurring at even filling factors.

Original language	English (US)
Pages (from-to)	589-592
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	15
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/15/6/318
State	Published - Jun 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/15/6/318

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@article{a017c4b1d24d40299eced29968e1f6f0,

title = "Cyclotron resonance in undoped, top-gated heterostructures",

abstract = "We report on cyclotron resonance detected by far-infrared photoconductivity of the two-dimensional electron gas formed in undoped, top-gated GaAs/Al0.3Ga0.7As heterostructures. The photoconductivity method demonstrated here is readily extendable to quantum wires. The top-gated device architecture avoids the disorder inherent in conventional modulation-doped devices and allows precise in situ tuning of carrier density over two orders of magnitude. We observe very sharp resonances (6 mT at 1.5 K) indicating a very high mobility, which is attributed to the low level of impurities. The variation of the linewidth at small filling factor is also consistent with a low concentration of impurities. These results suggest that the filling-factor-dependent oscillations observed in linewidth are not due to the screening of ionized impurities. Filling-factor-dependent oscillations in photoconductivity intensity are also observed, with maxima occurring at even filling factors.",

author = "Heron, {R. J.} and Lewis, {R. A.} and Clark, {R. G.} and Starrett, {R. P.} and Kane, {B. E.} and Facer, {G. R.} and Lumpkin, {N. E.} and Rickel, {D. G.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "2000",

month = jun,

doi = "10.1088/0268-1242/15/6/318",

language = "English (US)",

volume = "15",

pages = "589--592",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Cyclotron resonance in undoped, top-gated heterostructures

AU - Heron, R. J.

AU - Lewis, R. A.

AU - Clark, R. G.

AU - Starrett, R. P.

AU - Kane, B. E.

AU - Facer, G. R.

AU - Lumpkin, N. E.

AU - Rickel, D. G.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2000/6

Y1 - 2000/6

N2 - We report on cyclotron resonance detected by far-infrared photoconductivity of the two-dimensional electron gas formed in undoped, top-gated GaAs/Al0.3Ga0.7As heterostructures. The photoconductivity method demonstrated here is readily extendable to quantum wires. The top-gated device architecture avoids the disorder inherent in conventional modulation-doped devices and allows precise in situ tuning of carrier density over two orders of magnitude. We observe very sharp resonances (6 mT at 1.5 K) indicating a very high mobility, which is attributed to the low level of impurities. The variation of the linewidth at small filling factor is also consistent with a low concentration of impurities. These results suggest that the filling-factor-dependent oscillations observed in linewidth are not due to the screening of ionized impurities. Filling-factor-dependent oscillations in photoconductivity intensity are also observed, with maxima occurring at even filling factors.

AB - We report on cyclotron resonance detected by far-infrared photoconductivity of the two-dimensional electron gas formed in undoped, top-gated GaAs/Al0.3Ga0.7As heterostructures. The photoconductivity method demonstrated here is readily extendable to quantum wires. The top-gated device architecture avoids the disorder inherent in conventional modulation-doped devices and allows precise in situ tuning of carrier density over two orders of magnitude. We observe very sharp resonances (6 mT at 1.5 K) indicating a very high mobility, which is attributed to the low level of impurities. The variation of the linewidth at small filling factor is also consistent with a low concentration of impurities. These results suggest that the filling-factor-dependent oscillations observed in linewidth are not due to the screening of ionized impurities. Filling-factor-dependent oscillations in photoconductivity intensity are also observed, with maxima occurring at even filling factors.

UR - http://www.scopus.com/inward/record.url?scp=0033688276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033688276&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/15/6/318

DO - 10.1088/0268-1242/15/6/318

M3 - Article

AN - SCOPUS:0033688276

SN - 0268-1242

VL - 15

SP - 589

EP - 592

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

Cyclotron resonance in undoped, top-gated heterostructures

Abstract

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