Cycling of defects between trapped negative charge and interface states at the Si-SiO 2 interface

J. M. Sung, Stephen Aplin Lyon

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We have investigated the states produced at the Si-SiO 2 interface by Fowler-Nordheim tunneling and by UV photoinjection at low temperature (90 K). After the interface states are generated, subsequent application of a negative gate bias (5-6 MV/cm) converts them entirely into trapped negative charge. The reverse conversion into interface states occurs if a positive gate bias (5-6 MV/cm) is applied. Cycling of the defects between interface states and trapped negative charge is observed in both experiments. The data strongly suggest that both low-temperature Fowler-Nordheim tunneling and UV photoinjection generate essentially the same structural defect at the interface between Si and SiO 2 .

Original languageEnglish (US)
Pages (from-to)1152-1154
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number17
DOIs
StatePublished - Dec 1 1987

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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