Abstract
We have investigated the states produced at the Si-SiO2 interface by Fowler-Nordheim tunneling and by UV photoinjection at low temperature (90 K). After the interface states are generated, subsequent application of a negative gate bias (5-6 MV/cm) converts them entirely into trapped negative charge. The reverse conversion into interface states occurs if a positive gate bias (5-6 MV/cm) is applied. Cycling of the defects between interface states and trapped negative charge is observed in both experiments. The data strongly suggest that both low-temperature Fowler-Nordheim tunneling and UV photoinjection generate essentially the same structural defect at the interface between Si and SiO2.
Original language | English (US) |
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Pages (from-to) | 1152-1154 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 50 |
Issue number | 17 |
DOIs | |
State | Published - 1987 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)