Cw spectroscopy of ultrafast relaxation in semiconductor heterostructures

S. A. Lyon, C. L. Petersen

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Steady state hot luminescence measurements can be used to determine hot carrier distributions and relaxation rates for extremely fast processes with low injected carrier densities. Luminescence gives a direct measure of the distribution of hot carriers in a semiconductor. We discuss experiments which probe the distribution of electrons high in the conduction band. These measurements have been used in GaAs to determine the LO phonon emission time by a hot electron(100 fs), the F to L intervalley scattering rate (250 fs for an electron initially about 70 meV above the bottom of the L-valleys), and the r to X intervalley scattering rate (30 fs for an electron about 85 meV above the bottom of the X-valleys). Recent experiments which measure the relaxation of hot electrons in the presence of a high density of cold electrons in bulk GaAs and GaAs quantum wells are presented.

Original languageEnglish (US)
Pages (from-to)264-268
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume942
DOIs
StatePublished - Aug 22 1988

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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