Abstract
We report the observation of discontinuities in the dV/dI characteristics of high-mobility two-dimensional (2D) electron systems in GaAs/AlxGa1-xAs heterostructures at very low Landau-level filling factors. We discuss a model of inhomogeneous current transport that is able to account for many of the observations independent of the 2D electron state.
Original language | English (US) |
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Pages (from-to) | 6432-6435 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 40 |
Issue number | 9 |
DOIs | |
State | Published - 1989 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics