Abstract
We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1947-1949 |
| Number of pages | 3 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 40 |
| Issue number | 6 |
| DOIs | |
| State | Published - Apr 2008 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Keywords
- Carrier injection
- Laser diode
- Microscopic-EL imaging
- Quantum wire