Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

Makoto Okano; Shu man Liu; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1016/j.physe.2007.09.043

Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

Makoto Okano, Shu man Liu, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.

Original language	English (US)
Pages (from-to)	1947-1949
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	6
DOIs	https://doi.org/10.1016/j.physe.2007.09.043
State	Published - Apr 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Carrier injection
Laser diode
Microscopic-EL imaging
Quantum wire

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10.1016/j.physe.2007.09.043

Cite this

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title = "Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K",

abstract = "We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.",

keywords = "Carrier injection, Laser diode, Microscopic-EL imaging, Quantum wire",

author = "Makoto Okano and Liu, {Shu man} and Masahiro Yoshita and Hidefumi Akiyama and Pfeiffer, {Loren N.} and West, {Ken W.}",

year = "2008",

month = apr,

doi = "10.1016/j.physe.2007.09.043",

language = "English (US)",

volume = "40",

pages = "1947--1949",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

AU - Okano, Makoto

AU - Liu, Shu man

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

PY - 2008/4

Y1 - 2008/4

N2 - We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.

AB - We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.

KW - Carrier injection

KW - Laser diode

KW - Microscopic-EL imaging

KW - Quantum wire

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UR - http://www.scopus.com/inward/citedby.url?scp=41349100224&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2007.09.043

DO - 10.1016/j.physe.2007.09.043

M3 - Article

AN - SCOPUS:41349100224

SN - 1386-9477

VL - 40

SP - 1947

EP - 1949

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 6

ER -

Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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